Физика полупроводниковых приборов - Зи С.М.
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15. For a comprehensive review see (a) G. Burns and М. I. Nathan, "Р-N
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17. Levine A. K. "Lasers", American Scientist, 51, 14 (1963).
18. For a lucid discussion, see A. Yariv, Quantum Electronics, New York,
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23. Arnold К. М., Mayburg S. "Cylindrical GaAs Laser Diode", J. Appl.
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24. Ladany I. Some Observation on Tringular GaAs Lasers", Proc. IEEE, 52,
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24a. Laff R. A., Dumke W. P., Dill F. H., Burns G. "Directionality Effect
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25. Marinace J. C. "Diffused Junctions in GaAs Injection Lasers", J.
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26. Pikuhn М. H" Rupprecht H. S. "Diffusion Problems Related to GaAs
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27. Dyment J. C., D'Asaro L. A. "Continuous Operation of GaAs Junction
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28. Nelson H. "Epitaxial Growth from the Liquid State and Its Application
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30. Burrell G. J. "Semiconductor Injection Lasers and Lamps", Tech.
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31. Pilkuhn M" Rupprecht H., Blum S. "Effect of Temperature on the
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32. Pilkuhn М. H., Rupprecht H. S. "Influence of Temperature on Radiative
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33. Pilkuhn М., Rupprecht H., Woodall J. "Continuous Simulated Emission
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34. Burns G., Levitt R. S., Nathan М. I., Weiser K. "Some Properties of
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35. Zachos Т. H., Ripper J. E. "Resonat Modes of GaAs Junction Lasers",
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36. Dyment J. C. "Hermite-Gaussians Mode- Patterns in GaAs Junction
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37. Zachos Т. H. "Gaussian Beams from GaAs Junction Lasers", Appl. Phys.
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38. Ryan F. М., Miller R. C. "The Effect of Uniaxial Strain on the
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39. Melngailis I., Rediker R. H. "Properties of InAs Lasers", J. Appl.
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40a. Dyment J. C., Ripper J. E. "Temperature Behavior of Stimulated
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40b. Fenner G. E. "Delay of the Stimulated Emission in GaAs Laser Diodes
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43. Phelan R. J., Rediker R. H. "Optically Pufflped Semiconductor
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44. Hoionyak N. Jr., Sirkis M. D., Stillman G. E., Johnson M.
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45. Melngailis I. "Optically Pumped Indium Arsenide Laser", IEEE J.
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47. Hurwitz С. E. "Efficient Ultraviolet Laser Emission in Electron- Beam
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48. Popov Y. M. "Semiconductor Lasers", Appl. Optics, 6, 1818
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