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Физика полупроводниковых приборов - Зи С.М.

Зи С.М. Физика полупроводниковых приборов — М.: Энергия, 1973. — 656 c.
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2b. Dean P. J. "А Survey of Radiative and Nonradiative Recombination
Mechanisms in the III-V Compound Semiconductors", Trans. Metallurgical
Society of AIME, 242, 384 (1968).
3. Ivey H. F. "Electroluminescence and Semiconductor Lasers", IEEE J.
Quantum Electronics, QE-2, 713 (1966).
4. Mooradian A., Fan H. Y. "Recombination Emission in InSb", Phys. Rev.,
148, 873 (1966).
5. Ivey H. F. Electroluminescence and Related Effects, Suppl. 1, to
Advances in Electronics and Electron Physics. New York - London, Academic
Press, 1961, p. 205.
6. Wang S. Solid State Electronics. New York, McGraw-Hill Book Qo., 1966.
7. Henry С. H., Dean P. J., Cuthbert J. D. "New Red Pair Luminescence
from GaP", Phys. Rev., 166, 754 (1968).
7a. Gershenzon M. "State of the Art of GaP Electroluminescent Junction",
Bell Syst. Tech. J., 45, 1599 (1966).
8. Henisch H. K. Electroluminescence. New York, Macmillan Book Co., 1962.
9. Eastman P. C., Haering R. R., Barnes P. A. "Injection
Electroluminescence in Metal-Semiconductor Tunnel Diodes", Solid State
Electron, 7, 879 (1964).
10. Carr W. N. "Characteristics of a GaAs Spontaneous Infrated Source
with 40 Percent Efficiency", IBEiE Trans, Electron Devices, ED-12, 531
(1965).
II. Hill D. E. "Internal Quantum Efficiency of GaAs Electroluminescent
Diodes", J. Appl. Phys., 36, 3405 (1965).
12. Carr W. N., Pittman G. E. "One Watt GaAs p-n Infrared Source",
ApplvPhys. Letters, 3, 173 (1963).
13. Gaiginaitis S. V. "Improving the External Efficiency of
Electroluminescent Diodes", J. Appl. Phys., 36, 460 (1965).
14. Lynch W. Т., Furnanage R. A. "Planar Beam-Lead Gallium Arsenide
Electroluminescent Arrays", IEEE Trans. Electron Devices, ED-14, 705
(1967).
15. Chapin D. М., Fuler G S., Pearson G. L. "New Silicon p-n Junction
Photocell for Converting Solar Radiation into Electrical Power", J. Appl.
Phys., 25, 676 (1954).
16. Wysocki J. J., Rappaport P., Davison E., Loferski J. J. "Low-Energy
Proton Bombardment of GaAs and Si Solar Cells", IEEE Trans. Electron
Devices, ED-13, 420 (1966).
17. Hill E. R., Keramidas B. G. "А Model for the CdS Solar Cell", IEEE
Trans. Electron Devices, ED-14, 22 (1967).
48. Kunioka A., Sakai Y. "Optical and Electrical Properties of Se-CdS
Photovoltaic Cells", Solid State Electron., 8, 961 (1965).
19. Vohl P., Perkins D. М., Ellis S. G., Addiss R. R., Hui W., Noel G.
"GaAs Thin-Film Solar Cells", IEEE Trans. Electron Devices, ED-14, 26
(1967).
20. Spakowski A. E. "Some Problems of the Thin-Film CdS Solar Cells".
IEEE Trans Electron Devices, ED-14, 18 '(1967).
21. Prince М. B. "Silicon Solar Energy Converters", J. Apipl. Phys., 26,
534 (.1955).
22. Wysocki J. J., Rappaport P. "Effect of Temperature on Photovoltaic
Solar Energy Conversion, J. Appl. Phys., 31, 571 (1960).
23. Shockley W., Quisser H. J. "Detailed Balance Limit of Efficiency of
p-n Junction Solar Cells", J. Appl. Phys., 32, 510 (1961).
24. Terman L. M. "Spectral Response of Solar-Cell Structures", Solid
State Electron., 2, 1 (1961).
25. Hall R. N. "Electron-Hole Recombination in Germanium", Phys. Rev.,
87, 387 (1952); Shockley W., Read W. T. "Statistics of the Recombination
of Holes and Electrons", Phys. Rev., 87, 835 (1952).
26. Queisser H. J. "Forward Characteristics and Efficiencies oi Selicon
Solar Cells", Solid State Electron., 5, 1 (1962).
27. Handy R. J. "Theoretical Analysis of the Series Resistance of a Solar
Cell", Solid State Electron., 10, 765 (1967).
28. Rosenzweig W., Gummel H. K-> Smits F. M. "Solar Cell Degradation Uber
I-MeV Electron Bombardment", Bell Syst. Tech. J., 42, 339 (1963).
29. Statler R. L. "An Evaluation by Solar Simulation of Radiation Damage
in Silicon Solar Cells", IEEE Trans. Electron Devices, ED-14, 31 (1967).
30. Tanke R. V., Faraday B. J. "Protcn-Irradiation Study of Pulled and
Float-Zone Silicon Solar Cells", Proc. IEEE, 55, 234 (1967).
31. For an excellent review on high-speed photodiodes see L. K. Anderson
and B. J. McMurtry, "High Speed Photodetectors", Proc IEEE, 54, 1335
(1966).
32. For a review, see for example, M. Ross, Laser Receivers - Devices,
Techniques, Systems. New York, John Wiley and Sons, Inc., 1966.
32a. Kruse P. W., McGlauchin L. D., McQuistan R. B. Elements of Infrared
Technology, John Wiley and Sons, Inc., 1961.
33. Смотри обзор R. H. Bube. "Comparison of Solid State Photo-electronic
Radiation Detectors", AIME Trans, 239, 291 (1967).
34. Levinstein H. "Extrinsic Detectors", Appl. Opt., 4, 639 (1965).
35. DiDomenico М., Jr., Svelto O. "Solid State Photodetection Comparison
between Photodiodes and Photoconductors", Proc. IEEE, 52, 136 (1964).
36. Lucovsky G., Lasser М. E., Emmons R. B. "Coherent Light Detection in
Solid-State Photodiodes", Proc. IEEE, 51, 166 (1963).
37. Ван-дер-Зил. Флюктуационные явления в полупроводниках.
Под ред. канд. физ.-мат. наук Ф. В. Бункина. М., Изд-во иностр. лит.,
1961.
38. Dach W. С., Newman R. "Intrinsic Optical Absorption in Single Crystal
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