Физика полупроводниковых приборов - Зи С.М.
Скачать (прямая ссылка):
Characteristics Below Saturation", IEEE Trans Electron Devices, ED-13,
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30. Newmark G. F. "Theory of the Influence of Hot Electron Effects on
Insulated - Gate Field-Effect Transistors", Solid State Electron., 10,
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in the MOS Transistor", IEEE Trans Electron Devices. ED-12, 129 (1965).
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Transistors", Solid State Electron, 10, 833 (1967).
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Дополнительная литература
l. Полевые транзисторы. Пцд ред. Майорова. М., "Советское радио",
1971.
Z. Иичман П. Физические основы полевых транзисторов с изолированным
затвором. М., "Советское радио", 1971.
3. Рябинкин. Теория полевых транзисторов на основании теории эффекта
поля.- "Радиотехника и электроника", т. 13, № 3, 1968.
4. Кроуфорд. Полевые транзисторы. М, "Мир", 1970
СПИСОК ЛИТЕРАТУРЫ К ГЛ. 11
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