Физика полупроводниковых приборов Книга 2 - Зи С.
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его и он в конце концов попадает к краю листа, где расположен солнечный
элемент. Для такой системы не нужно устройство слежения за Солнцем,
поскольку красители поглощают свет, падающий под любым углом.
Теоретическое значение к. п. д. здесь превышает 50 %.
ЛИТЕРАТУРА
1. Chapin D. М., Fuller С. S., Pearson G. L. A New Silicon p-n
Junction Photocell for Converting Solar Radiation into Electrical Power,
J. Appl. Phys.,
25, 676 (1954).
2. Raynolds D. C., Leies G., Antes L. L., Marbutger R. E. Photovoltaic
Effect in Cadmium Sulfide, Phys. Rev., 96, 533 (1954).
3. Hovel H. J. Solar Cells, in Willardson R. K., Beer A. C. Eds.,
Semiconductors and Semimetals, Vol. 11, Academic, N. Y., 1975;
Photovoltaic Materials and Devices for Terrestrial Applications, IEEE
Tech. Dig. Int. Electron Device Meet., 1979, p. 3.
4. Backus С. E. Ed., Solar Cells. IEEE Press, N. Y., 1976.
5. Pulfrey D. L. Photovoltaic Power Generation, Van Nostrand Reinhold,
N. Y., 1978. '
6. Johnston W. D. Jr. Solar Voltaic Cells, Dekker N. Y., 1980.
7. Bachmann K. J. Material Aspects of Solar Cells, in Kaldis E., Ed.,
Current Topics in Material Science, Vol. 3, North-Holland, Amsterdam,
1979.
8. Conf. Rec. 13th IEEE Photovoltaic Spec. Conf., IEEE, N. Y., 1978.
9. Conf. Rec. 14th IEEE Photovoltaic Spec. Conf., IEEE, N. Y., 1980.
10. Thekaekara M. P. Data on Incident Solar Energy, Suppl. Proc. 20th
Ann. Meet. Inst. Environ. Sci., 1974, p. 21.
11. Henry С. H. Limiting Efficiency of Ideal Single and Multiple
Energy Gap
Terrestrial Solar Cells, J. Appl. Phys., 51, 4494 (1980).
12. Prince М. B. Silicon Solar Energy Converters, J. Appl.
Phys., 26, 531
(1955).
13. Principal Conclusions of the American Physical Society Study Group
on Solar Photovoltaic Energy Conversion, American Physical Society, N.
Y., 1979.
14. Shockley W., Queisser H. J. Detailed Balance Limit of
Efficiency of pn
Junction Solar Cells, J. Appl. Phys.. 32, 510 (1961).
15. Handy R. J. Theoretical Analysis of the Series Resistance of a
Solar Cell, Solid State Electron., 10, 765 (1967).
16. Hall R. N. Electron-Hoie Recombination in Germanium, Phys. Rev. 87,
367 (1952).
17. Shockley W., Read W. T. Statistics of the Recombination of Holes
and Electrons, Phys. Rev., 87, 835 (1952).
18. Wysocki J. J., Rappaport P. Effect of Temperature on
Photovoltaic Solar
Energy Conversion, J. Appl. Phys., 31, 571 (1960).
19. Roscnzweig W., Gummel H. K., Smits F. M. Solar Cell Degradation
under
1 MeV Electron Bombardment, Bell Sys!. Tech. J., 42, 399 (1963).
20. Wysocki J. J., Rappaport P., Davison If., Hand R., Loferski J. J.
Lit-
Солнечные батареи
44!
hium-Doped Radiation-Resistant Silicon Solar Cells, Appl. Phys Le't 0 44
(1966). '
21. Mandelkorn J., Lamneck J. H. Jr., Simplified Fabrication of Back
Surface Electric Field Silicon Cells and Novel Characteristic of Such
Cells, Conf. Rec 9th IEEE Photovoltaic Spec. Conf., IEEE, N. Y., 1972, p.
66.
22. Lindmayer J., Allison J. F. The Violet Cell: An Improved Silicon
Solar Cell, Conf. Rec. 9th IEEE Photovoltaic Spec. Conf., IEEE, N. Y.,
1972, p. 83.
23. Arndt R. A., Allison J. F., Haunos J. G., Meulenberg A. Jr.,
Optical Properties of the COMSAT Non-Reflective Cell, Conf. Rec. 11th
IEEE Photovoltaic Spec. Conf., IEEE, N. Y., 1975, p. 40.
24. Chappel Т. I. The V-Groove Multijunction Solar Cell, IEEE Trans.
Electron Devices, ED-26, 1091 (1979).
25. Chiang S. Y., Carbajal B. G., Wakefield G. F. Improved Performance
Thin Solar Cells. IEEE Trans. Electron Devices, ED-25, 1405 (1978);
Matzen W. Т., Chiang S. Y., Carbajal B. G. A Device Model for the Tandem
Junction Solar Cell, IEEE Trans. Electron Devices, ED-26, 1365 (1979).
26. Frank R. I., Goodrich J. L., Kaplow R. A Low Series Resistance
Silicon Photovoltaic Cell for High Intensity Applications, Conf. Rec.
14th IEEE Photovoltaic Spec. Conf., IEEE, N. Y., 1980, p. 1350.
27. Feucht D. L. Heterojunction in Photovoltaic Devices, J. Vac. Sci.
Technol.,
14, 57 (1977).
28. Hovel H. J., Woodall J. M. Gaj.x AlxGaAs p - p - n Heterojunction
Solar Cells, J. Electrochem. Soc., 120, 1246 (1973).
29. Sites J. R. Current Mechanisms and Barrier Height in ITO/Si
Heterojunctions, Inst. Phys. Conf. Ser. 43, Chap. 22 (1979).
30. Harsha K. S. S., Bachmann K. J., Schmidt P. H., Spencer E. G.,
Thiel F. A. /г-Indium Tin Oxide/p-InP Solar Cell, Anpl. Phys. Lett., 30,
645 (1977).
31. Lamorte M. F., Abbott D. Analysis of AlGaAs-GalnAs Cascade Solar
Cell under AM0-AM5 Spectra, Solid State Electron., 22, 467 (1979).
32. Pulfrey D. L., McQuat R. F. Schottky-Barrier Solar-Cell
Calculations, Appl. Phys. Lett., 24, 167 (1974).
33. Anderson W. A., Vernon S. М., Mathe P., Lalevic B. Schottky Solar
Cells on Thin Epitaxial Silicon, Solid State Electron., 19, 973 (1976).
34. Li S. S. A Proposed Novel MPN GaAs Schottkv Barrier Solar Cell,
Jpn. J. Appl. Phys., 17, Suppl. 17-1, 291 (1978).
35. Card H. C., Yang E. S., Panayoetatos P. Peaked Schottky-Barrier
