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Эффект Ганна - Левинштейн М.Е.

Левинштейн М.Е., Пожела Ю.К., Шур М.С. Эффект Ганна — М.: Советское радио, 1975. — 288 c.
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amplifier.- "Electron. Lett", 1970, v. 6, № 2, p. 34-35.
4. Tihim H. W., Barber M. R., Hak-ki В. М., Knight S., Uenohara M.
Microwave amplification in dc-biased bulk semiconductors. - "Appl. Phys.
Lett.", v. 7, № 6, p. 167-168.
5. Thim H. W., Barber M. R. Microwave amplification in GaAs bulk
semiconductor.- "IEEE Trans.", 1966, v. ED-13, № 1, p. 110-114.
6. Thim H. W., Lehner H. H. Linear millimeter wave amplification with
GaAs wafers. - "Proc. IEEE", 1967, v. 55, № 5, p. 718-719.
7. Thim H. W. Temperature effects in
bulk GaAs amplifiers. - "IEEE Trans.", 1967, v. ED-14, № 2,
p. 59-62.
8. Hayes R. E. Saturation power in GaAs amplifier. - "IEEE Trans.",
1968, v. ED-15, № 3, p. 183-185.
9. Thim H. W. Series-connected bulk GaAs amplifiers and oscillators.-¦
"Proc. IEEE", 1968, v. 56, № 7, p. Г245.
10. Berson В. E. Transferred electron devices.- In.: Summaries of
European Semicond. Device Research Conference, report Al/Sl, ESDERC,
Munich,
1971.
11. Robson P. N., Kino G. S., Fay B.
Two-port microwave amplification in long samples of GaAs. - "IEEE
Trans.", 1967, v. ED-14, № 9, p. 612- 615.
12. Schelonka E. P. Two-port amplifiers using gallium arsenide as the
active element. - "Proc. IEEE", 1968, v. 56, № 3, p. 339.
13. Kozdon P., Robson P. N. Two-port amplifiers using the tranferred
electron effect in GaAs. - In: 8th Int. Conf. on Microwave and Optical
Generation and Amplification (MOGA). Amsterdam, 1970, paper 16.2.
14. Dean R. H., Dreeben A. B., Kaminski J. F., Triano A. - Traveling-
wave amplifier using epitaxial GaAs layer. - "Electron. Lett.", 1970, v.
6, № 24, p. 775-776.
15. Hariu T" Ono S., Shibata Y. Wideband performance of the injection-
limited Gunn diode.-"Electron. Lett.",
1970, v. 6, № 21, p. 666-667.
282
16. Thim H. W. Noise reduction in bulk negative-resistance amplifiers.-
"Electron. Lett.", 1971, v. 7, № 4, p. 106- 108.
17. Englemann R. W., Mathers G. W.
Oscillations in bulk GaAs due to an equivalent negative RF conductance.-
"Proc. IEEE", 1966, v. 54, № 5, p. 786-788.
18. McCumber D. E., Chynoweth A. G. Theory of negative-conductance
amplification and of Gunn instabilities in two-valley semiconductors. -
"IEEE Trans.", 1966, v. ED-13, № 1, p. 4-21.
19. Naryaan S. Y., Sterzer F. Stabilisation of transferred-electron
amplifiers with large not products. - "Electron. Lett.", 1969, v. 5, № 2,
p. 30-31.
20. Sterzer F. Stabilization of supercritical transferred-electron
amplifiers. - "Proc. IEEE", 1969, v. 57, № 10, p. 1781-1783.
21. Mahrous S., Hartnagel H. L. Gunn effect domain formation controlled
by a complex load. - "Brit. J. Appl. Phys. (J. Phys. D.)", 1969, v. 2, №
1, p. 1-11.
22. Walsh Т. E., Perlman B. S., En-
strom R. E. Stabilized supercritical transferred electron amplifiers.
-
"IEEE Trans.", 1969, v. SC-4, № 12, p. 374-376.
23. Magarshack J., Mircea A. Stabiliza-
tion and wide-band amplification using over-critically doped transferred-
electron diodes. - In.: 8th Int.
Conf. on Microwave and Optical generation and Amplification (MOGA).
Amsterdam, 1970, paper 16.4.
24. PoIImann H., Engelmann R. W. H. On supercritical reflection type
amplification and the stability criterion in bulk GaAs devices. In.: 8 th
Int. Conf. on Microwave and Optical Generation and Amplification (MOGA).
Amsterdam, 1970, paper 16.5.
25. Kataoka S., Tateno H., Kawashima M. Improvements in effeciency and
tuna-bility of Gunn oscillators by dielec-tric-surface loading. -
"Electron. Lett.", 1969, v. 25, № 20, p. 491-492.
26. Pollmann H., Engelmann R. W. H. On supercritical reflection-type
amplification and the stability criterion in bulk GaAs devices.- MOGA-70,
1970, Summaries, № 16-5.
27. Frey W., Engelmann R. W. H., Bosch B. G. Microwave travelling-wave
amplification in bulk gallium-arsenide. - 8th Int. Conf. on Microwave and
Optical generation and Amplification (MOGA). Amsterdam.
1970, paper 16.3.
28. Perlman B. S., Upadhyayula C. L., Marx R. E. Wide-band reflection-
type
к
transferred electron amplifiers. - "IEEE Trans.", 1970, v. MTT-18, № 11,
p. 911-921.
29. Walsch Т. E., Perlman B. S., En-strom R. E. Stabilized
supercritical transferred electron amplifiers. - "IEEE Trans.", 1969, v.
SC-4, № 12, p. 374-376.
30. Perlman B. S. CW-microwave amplification from circuit -
stabilized
epitaxial GaAs transferred electron devices. - "IEEE Trans.", 1970, v.
SC-5, № 12, p. 331-337.
31. Magarshack J., Mircea A. Wideband CW amplification in X-band with
Gunn diodes. - In: ISSC Conf. Dig. Tech. Papers (Philadelphia, Pa), p.
132-135.
32. Periman B. S., Marx R. E. Linear
microwave solid state transferred electron power amplifier with a large
gain band width product.- In: P.T.G.M.T.T. Symp. Dig. Tech. Pap.
1970, p. 227-229.
33. Perlman B. S., Upadhyayuia L. C.,
Siekanowicz W. W. Microwave properties and applications of negative
conductance transferred electron devices.- "Proc. IEEE", 1971, v.
59,
№ 8, p. 1229-1237.
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