Эффект Ганна - Левинштейн М.Е.
Скачать (прямая ссылка):
23. Larrabee R. D., Hicinbothem W. A., Steele М. C. A rapid evaluation
technique for functional Gunn diodes.- "IEEE Trans.", 1970, v. ED-17, №
4, p. 271-274.
24. Hayashi Т., Uenohara M. Evaluation of metal-semiconductor contacts
in bulk GaAs oscillators by the photovoltaic effect. - "IEEE Trans.",
1966, v. ED-13, № 1, p. 200-201.
25. Coliiver D. I., Gibbs S. E., Taylor В. C. Material Selection for
Efficient Transferred - Electron Devices Ai Q Band. - "Electron. Lett.",
1970, v. 6. № 11, p. 353-355.
26. Hasty Т. E., Stratton R., Jones E. L. Effect of nonuniform
conductivity on the behavior of Gunn effect samples.- "J. Appl. Phys.",
1968, v. 39, № 10, p. 4623-4632.
27. Baughan К. М., Myers F. A., Kel-lett G. High power pulsed Gunn
effect oscillators using series and parallel arrays of devices. In: 8th
Int. Conf. on Microwave and Optical Generation and Amplification (MOGA).
Amsterdam, 1970, paper 2.3.
28. Bird J., Bolton R. M. G., Edridge A. L. Gunn diodes with improved
frequency-stability (temperature variations).- "Electron. Lett.", 1971,
v. 7, № 11, p. 299-301.
29. Jeppsson B., Marklund I. Failure mechanisms in Gunn diodes. -
"Electron Lett.", 1967, v. 3, № 5, p. 213- 214.
286
30. Haisty R. W., Hoyt P. L. Investigation of voltage breakdown in
semi-insulating GaAs. - "Sol. Stat. Electron.", 1967, v. 10, № 8, p. 795-
800.
31. Carlson R. O., Slack G. A., Silverman S. I. Thermal conductivity of
GaAs and GaAsi_xPx laser semiconductors.- "J. Appl. Phys.", 1965, v. 36,
№ 2, p. 505-507.
32. Карслоу Г., Егер Д. Теплопроводность твердых тел. М., "Наука",
1964, с. 214.
33. Knight S. Heat flow in n++-n-n+ epitaxial GaAs bulk effect
devices.- "Proc. IEEE", 1967, v. 55, № 1.
34. LSA diodes with improved heat sink. - "Electronics", 1969, v. 42, №
4, p. 64.
35. Knight S. Current runaway in и-GaAs bulk effect. - "Proc. IEEE",
1966, v. 54, № 7, p. 1004-1005.
36. Bravman J. S., Eastman L. F. Thermal effects of the operation of
high average power Gunn devices. -¦ "IEEE Trans.", 1970, v. ED-17, № 9.
СПИСОК ДОПОЛНИТЕЛЬНОЙ ЛИТЕРАТУРЫ
1. De Sa В. A. E., Hobson G. S. Design criteria for C. W. Gunn
oscillators with good frequency-temperature stability.- "Sol.-St.
Electron.", 1973, v. 16, № 11, p. 1261-1266.
2. Cohen J., Gilden M. Temperature stability of an MIC Gunn-effect CW
oscillator. - "IEEE Trans.", 1973, MTT-21, № 2, p. 115-116.
3. Hasegewa F., Aono Y. Thermal limitation for C. W. output power of a
Gunn diode. - "Sol. St. Electron.",
1973, v. 16, № 3, p. 337-344.
4. Narayan S. Y., Paczkowski J. P. Integral heat sink transferred
electron oscillators. - "RCA Rev.", 1972, v. 33, № 4, p. 752-765.
К ПРИЛОЖЕНИЮ
1. Cohen M. L., Bergstresser Т. K. Band structures and pseudo-
potential form factors for 14 semiconductors from the diamond and
zincblende structures.- "Phys. Rev.", 1966, v. 141, № 2, p. 789-796.
2. McGroddy J. C. Negative differential conductivity in
semiconductors. - In.: Proc. 10th Int. Conf. on Phys. Semicond., 1970,
Cambridge, Mass.
3. Hillbrand H. Monte-Carlo calculation of NDR in gallium antimonide.
- "Phys. Stat. Solidi (a)," 1971, v. 5, № 2, p. kl 13-kl 14.
4. Zalien R., Paul W. Effcct of pressure on interband reflectivity
spectra of germanium and related semiconductors.- "Phys. Rev.", 1967, v.
155, № 3, p. 703-711.
5. Sturge M. D. Optical absorbtion of
GaAs between 0,6 and 2,75 ev. - "Phys. Rev.", *1962, v. Ii27, № 3.
6. James L. W., Moll J. L. Transport properties of GaAs obtained from
photoemission measurements. - "Phys. Rev.", 1969, v. 183, № 3, p. 740-
753.
7. Ehrenreich H. Band structure and electron transport of GaAs. -
"Phys. Rev.", 1960, v. 120, № 6.
8. Спайсер У. E., Иден P. К- Фото-эмиссионные исследования зонной
структуры полупроводников.-В кн.: "Труды IX Межд. конф. по физике
полупроводников", Москва, 1968. М.-Л., "Наука", 1969, с. 68-96
9. James L. W., Van Dyke J. P., Herman F., Chang D. M. Band structure
and high-field transport properties of InP. - "Phys. Rev. B.", 1970, v.
1, № 10, p. 3998-4004.
10. Хиггинботэм С. У., Поллак Ф. X.,
Кардона М. Зонная структура и оптические постоянные InSb, InAs ii CaSb;
кр-метод. - В кн.: "Труды
IX межд. конф. по физике полупроводников". Москва, 1968. М. - Л, "Наука",
1969, с. 61-67.
11. Поровски С. Энергия L-минимума и механизм эффекта Ганна в и-InSb. В
кн.: Труды Симпозиума по физике плазмы и электрическим неустойчивостям в
твердых телах. Вильнюс,
1971, "Минтис", 1972, с. 250-252.
12. Zwerdling S., Lax В., Roth L. М. Oscillatory magneto-absorptioin
semiconductors. - "Phys. Rev.", 1957, v. 108, № 6, p. 1402-1408.
13. Lorentz М., Chicotka R., Pettit G. D., Dean P. J. The fundamental
absorption edge of AlAs and AlP. - "Sol.-
f Stat. Comm.", 1970, v. 8, № 9.
14. Onton A., Lorenz M. R. Electronic structure of III-V alloys from
luminescence.- In.: Proc. 10 th Int. Conf. on Phys. Semicond., 1970,
Cambridge, Mass., p. 444-449.
15. Hilsum C., Rees H. D. A detailed
