Физика полупроводниковых приборов - Зи С.М.
Скачать (прямая ссылка):
Interface Effect in Schottky Barriers at n-Type Silicon Surface", J.
Appl. Phys.,'36, 3843 (1965).
29. Crowell C. R., Sze S. М., Spitzer W. G. "Equality of the Temperature
Dependence of the Gold - Silicon Surface Barrier and the Silicon Energy
Gap in an n-Typc Si Triode", Appl. Phys. Letters, 4, 91 (1964).
29a. Kahng D. "Conduction Properties of the An - n Type "Schottky
Barrier", Solid State Electron., 6, 281 (1963).
30. Spitzer W. G., Meand C. A. "Conduction Band Minima of
Ga(Asi_xPx)", Phys. Rev., 133, A872 (1964).
31. Baker R. H. "Maximum Efficiency Switching Circuit", MIT Lincoln Lab.,
Lexington Mass, Report TR-110 (1956).
32. Tada K., Laraya J. L. R. "Reduction of the Storage Time of
a Transistor Using a Schottky - Barrier Diode", Proc. IEEE, 55, >064
(1967).
33. Mead C. A. "Schottky Barrier Gate Field - Effect Transistor", Proc.
IEEE, 54, 307 (1966).
34. Hooper W. W., Lehrer W. I. "An Epitaxial GaAs Field - Effect
Transistor", Proc. IEEE, 55, 1237 (1967).
35. Sze S. М., Lepselter M. P., MacDonald R. W. "Metal - Semiconductor
IMPATT Diode", Solid State Electron., 11 (1968).
36. For e general reference on vacuum deposition, see L. Holland, Vacuum
Deposition of Thin Films, Chapman and Hall Ltd., London,
1966.
37. Honig R. E. "Vapor Pressure Data for the Solid and Liquid Elements",
RCA Review, 23, 567 (1962).
38. For a general review, see M. A. Lempert, Injection, Currents
in Solids, New York, Academic Press, 1965.
39. Buget U., Wright G. T. "Space - Charge - Limited Current in Silicon",
Solid State Electron., 10, 199 (1967).
40. Mott N. F., Gurney R. W. Electronic Processes in Ionic Crys-
tals, Oxford, Clarendon Press, 1940.
СПИСОК ЛИТЕРАТУРЫ К ГЛ. 9
1. Moll J. L. "Variable Capacitance with Large Capacity Change", Wescon
Convention Record, Part 3, p. 3'2 (1959).
2. Pfann W. G., Garrett C. G. B. "Semiconductor Varactor Using Space -
Charge Layers", Proc. IRE, 47, 2011 ('1959).
3. Frankl D. R. "Some Effects of Material Parameters on the Design of
Surface Space - Charge Varactors", Solid State Electron, 2, 71 (1961).
4. Lindner R. "Semiconductor Surface Varactor", Bell Syst. Tech. J., 41,
803 (1962).
5. Terman L. M. "An Investigation of Surface States at a Silicon/Silicon
Dioxide Interface Employing Metal - Oxide-Silicon Diodes", Solid State
Electron., 5, 285 (1962).
6. Lehovec K-, Slobodskoy A. "Field - Effect Capacitance Analysis of
Surface States on Silicon", Phys. Stat. Solidi, 3, 447 (1963).
7. Many A., Goldstein Y., Grover N. B. Semiconductor Surfaces.
New York, John Wiley and Sons, Inc., 1965.
8. Snow E. H., Grove A. S., Deal В. E., Sah С. T. "Ion Transport
Phenomena In Insulating Films", J. Appl. Phys., 36, 1664 (1965).
9. Nicollian E. H., Goetzberger A. "The Si - Si02 Interface - Electrical
Properties as Determined by the MIS Conductance Technique", Bell Sist.
Tech. J., 46, 1055 (1967).
10. Garrett C. G. B., Brattain W. H. "Physical Theory of Semiconductor
Surfaces", Phys. Rev., 99, 376 (1955).
11. Kingston R, H., Neustadter S. F. "Calculation of the Space Charge,
Electric Field, and Free Carrier Concentration at the Surface of a
Semiconductor", J. Appl. Phys., 26, 7il8 (1966).
I'la. Youug C. F. "Extended Curves of the Sipace Charge, Electric Field,
and Free Carrier Concentration at the Surface of a Semiconductor and
Curves of the Electrostatic Potential Inside a Semiconductor", J. Appl.
Phys., 32, 329 (1961).
12. Hofstein S. R., Warfield G. "Physical Limitation on the Frequency
Response of a Semiconductor Surface Inversion Layer", Solid State
Electron, 8, 321 (1965).
13. Grove A. S., Deal В. E., Snow E. H., Sah С. T. Investigation of
Thermally Oxidized Silicon Surfaces Using Metal - Oxide -Semiconductor
Structures", Solid State Electron., 8, 145 (1965).
14. Grove A. S., Snow E. H., Deal В. E., Sah S. T. "Simple Physical M-
odel tor the Space - Charge Capacitance of Metal - Oxide - Semiconductor
Structures", J. Appl. Phys., 33, 2458 (1964).
15. Goetzberger A. "Ideal MOS Curves for Silicon", Bell Syst. Tech. J"
45, 1097 (1966).
16. Тамм И. E. Physik. Z. Sowjetumon, 1, 733 (1933).
17. Shockley W. "On the Surface States Associated with a Periodic
Potential", Phys. Rev., 56, 317 (1939).
18. Kontecky J. "On the Theory of Surface States", J. Phys. Chem. Solids,
14, 233 (I960).
19. Pugh D. "Surface States on the (111) Surface of Diamond", Phys. Rev.
Letters, 12, 390 (1964).
20. Shockley W., Pearson G. L. "Modulation of Conductance of Thin Films
of Semiconductors by Surface Charges", Phys. Rev., 74, 232 (1948).
21. Allen F. G., Gobeli G. W. "Work Function, Photoelectric Threshold and
Surface States of Atomically Clean Silicon", Phys. Rev., 127, 150 (1962).
22. Goetzberger A. "Behavior of MOS Inversion Layers at Low Temperature",
IiE.EE Trans. Electron Devices, ED-14, 787 (1967).
23. Nicollian E. . H., Goetzberger A. "MOS Conductance Technique for
Measuring Surface State Parameters", Appl. Phys. Letters, 7, 216
