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Физика полупроводниковых приборов - Зи С.М.

Зи С.М. Физика полупроводниковых приборов — М.: Энергия, 1973. — 656 c.
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Germanium", Phys. Rev. Letters, 3, 466 (1959).
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12a. Келдыш Л. В.- "Ж. эксперим. и теор. физ.", 6, 763 (1958).
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14. Chynoweth A. G., Feldmann W. L., Logan R. A. "Excess Tun-
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17. Holonyak N., Jr. "Evidence of States in the Forbidden Gap of
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19. Davis R. E., Gibbons G. "Design Principles and Construction
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20. Chynoweth A. G., Feldmann W. L., Lee C. A., Logan R. A. Pearson
G. L., Aigrain P. "Internal Field Emission at Narrow Silicon
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Germanium p-n Junctions", Phys. Rev., 118, 425 (1960).
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22. Butcher P. N., Hulme K. F., Morgan J. R. "Dependence of Peak Current
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State Electron., 3, 358 (1962).
23. Glicksman R., Minton R. M. "The Effect of p-Region Carrier
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24. Minton R. М., Glicksman R. "Technical and Experimental Analysis of
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25. Carr W. N. "Reversible Degradation Effects in GaSb Tunnel Diodes",
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27. Esaki L., Miyahara Y. "А New Device Using the Tunneling Process in
Narrow p-n Junctions", Solid State Electron., 1, 13 (I960).
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877 (1962).
28. Franks V. М., Hulme K. F., Morgan J. R. "An Alloy Process for Making
High Current Density Silicon Tunnel Diode Junctions", Solid State
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29. Kleinkneht H. P. "Indium Arsenide Tunnel Diodes", Solid State
Electron., 2, 133 (1961).
30. Barrus C. A. "Indium Phosphide Esaki Diodes", Solid State Electron.,
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32. Logan R. A., Augustyniak W. М., Gilbert J. F. "Electron Bombardment
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Excess Current in Tunnel Diodes", J. Appl. Phys., 35, 1860 (1964).
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34a. О влиянии давления на свойства твердых тел смотри W. Paul and D. М.
Warschauer, Ed., Solids Under Pressure, New York, McGraw - Hill Book Go.
Inc., 1963.
35. Buckingham J. H., Hulme K- F., Morgan J. R. "Impurity Diffusion and
Drift in Germanium Tunnel - Diode Junctions", Solid State Electron., 6,
233 (1963).
36. Gold R. D., Weisberg R. L. "Permanent Degradation of GaAs Tunnel
Diodes", Solid State Electron., 7, 811 (1964).
37. Epstein A. S., Caldwell J. F. "Degradation in Zn - doped GaAs Tunnel
Diodes", J. Appl. Phys, 35, 24Э1 (1964).
38. Kessler H., Winogradoff N. N. "Surface Aspects of the Thermal
Degradation of GaAs p-n Junction Lasers and Tunnel Diodes", IEEE Trans.
Electron Devices, ED-13, 688 (1966).
39. Alberghini J. E., Brondy R. M. "Surface Excess Conductance in Ge
Tunnel Junction via Surface States", Appl. Phys. Letters, 9, 362 (1966).
40. "Standards on Definitions, Symbols, and Methods of Test for
Semiconductor Tunnel (Esaki) Diodes and Backward Diodes", IEEE Trans,
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