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Физика полупроводниковых приборов - Зи С.М.

Зи С.М. Физика полупроводниковых приборов — М.: Энергия, 1973. — 656 c.
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Окисление, диффузия, эпитаксия. Пер. с англ. Под ред. В. Н. Мордковича,
Ф. П. Пресса. М., "Мир", 1969.
33. Kendall D. L. Diffusion in ПТ - V Compounds with Particular Reference
to Self - Diffusioa in InSb, Rep. № 65-29, Dept, of Material Science,
Stanford University, Stanford (August 1965).
34. Trumbore F. A. "Solid Solubilities of Impurity Elements in Germanium
and Silicon", Bell System Tech. J., 39, 205 (1960).
35. Wolfstirn К. B. "Holes and Electron Mobilities in Doped Silicon From
Radio Chemical and Conductivity Measurements", J. Phys. Chem. Solids, 16,
279 (1960).
36. Grove A. S. Physics and Technology of Semiconductor Devices, John
Wiley and Sons, New York (1967).
37. Bardeen J., Shockley W. "Deformation Potentials and Mobilities in
Nonpolar Crystals", Phys. Rev., 80, 72 (1950).
38. Conwell E., Weisskopf V. F. "Thory of Impurity Scattering in
Semiconductors", Phys., Rev., 77, 388 (1950).
39. Ehrenreich H. "Band Structure and Electron Transport in GaAs", Phys.
Rev., 120, 1951 (1960).
40. Prince М. B. "Drift Mobility in Semiconductors I, Germanium", Phys.
Rev., 92, 681 (1953).
41. Gartner W. W. Transistors, Principles, Design, and Applications, D.
Van Nostrand Co. Inc., Princeton (1960).
42. Valdes L. B. "Resistivity Measurement on Germanium for Transistors",
Proc. IRE, 42, 420 (1954).
43. Smits F. M. "Measurement of Sheet Resistivities with the Four -Point
Probe", Bell Syst. Tech. J. 37, 711 (1958).
44. Cuttriss D. B. "Relation Between Surface Concentration and Average
Conductivity in Diffused Layers in Ge", Bell Syst. Tech. J. 40, 509
(1961).
45. Irvin J. C. "Resistivity of Bulk Silicon and of Diffused Layers in
Silicon", Bell Syst. Tech. J., 41, 387 (1962).
46. Hall E. H. "On a New Action of the Magnet on Electric Currents", Am.
J. Math., 2, 287 (1879).
47. Van der Pauw L. J. "А Method of Measuring Specific Resistivity and
Hall Effect -of Disc or Arbitrary Shape", Philips Research Reports, 13, №
1, p. 1-9 (Feb. 1958).
48. Sah C. T" Noyce R. N., Shockley W. "Carrier Generation and
Recombination in p-n Junction and p-n Junction Characteristics", Proc.
IRE, 45, 1228 (1957).
48a. Hall R. N. "Electron - Hole Recombination in Germanium", Phys. Rev.,
87, 387 (1952).
48b. Shockley W., Read W. T. "Statistics of the Recombination of Holes
and Electrons", Phys. Rev., 87, 835 (1952).
49. Stevenson D. Т., Keyes R. J. "Measurement of Carrier Lifetime in
Germanium and Silicon", J. Appl. Phys., 26, 190 (1955).
50. Gartner W. W. "Spectral Distribution of the Photomagnetic Electric
Effect", Phys. Rev., 105, 823 (1957). (См. также ссылки "а литературу,
приведенные в [JL 41]).
51. Brockhouse В. N., Lyengar Р. К. "Normal Modes of Germanium by Neutron
Spectrometry", Phys. Rev., Ill, 747 (1958).
52. Brockhouse B. N. "Lattice Vibrations in Silicon and Germanium", Phys.
Rev. Letters, 2, 256 (1959).
53. Waugh J. L. Т., Dolling G. "Crystal Dynamics of Gallium Arsenide",
Phys. Rev., 132, 2410 (1963).
54. Dash W. C., Newman R. "Intrinsic .Optical Absorption in Single -
Crystal Germanium and Silicon at 77 °K 'and 300 °K", Phys. Rev., 99, 1151
(1955).
55. Philipp H. R., Taft E. A. "Optical Constants of Germanium in the
Region I to 10 eV", Phys. Rev., 113, 1002 (1959), also "Optical Constants
of Silicon in the Region I to 10 eV", Phys. Rev. Letters, 8, 13 (1962).
56. Hill D. E. "Infrared Transmission and Fluorescence of Doped Gallium
Arsenide", Phys. Rev., 133, A 866 (1964).
57. Carruthers J. A., Geballe Т. H., Rosenberg H. М., Ziman J. M. "The
Thermal Conductivity of Germanium and Silicon between 2 and 300 °K", Proc
Roy Soc., London, 238, 502 (1957).
58. Holland M. G. "Low Temperature Thermal Conductivity in Silicon",
Proc. International Conf. Semiconductor Physics. Prague
(1960), Academic Press, New York (1961).
59. Holland M. G. "Phonon Scattering in Semiconductors from Thermal
Conductivity Studies", Phys. Rev., 134, A471 (1964).
60. White G. K. "The Thermal and 'Electrical Conductivity of Copper at
Low Temperatures", Austr. J. Phys., 6, 397 (1953).
61. Berman R. "The Thermal Conductivity of Diamond at Low Temperatures",
Proc. Roy. Soc. (London), Ser. A, 200, 171 (1953).
62. Seidel Т. E., Scharfetter D. L. "Dependence of Hole Velocity upon
Electric Field and Hole Density for p-type Silicon", J. Phys. Chem.
Solids, 28, 2563 (1967).
62a. Norris C. P., Gibbons J. F. "Measurement of High - Field Carrier
Drift Velocites in Si by a Time - of - Flight Technique", IEEE Trans.
Electron Devices, ED-14, 38 (1967).
62b. Duh C. Y., Moll J. L. "Electron Drift Velocity in Avalanching
Silicon Diodes", IEEE Trans. Electron Devices, ED-14, 38 (1967).
63. Ruch J. G., Kino G. S. "Measurement of the Velocity - Field
Characteristics of Gallium Arsenide", Appl. Phys. Letters, 10, 40 (1967).
64. Miller S. L. "Avalanche Breakdown on Germanium", Phys. Rev., 99, 1234
(1965).
65. Lee C. A., Logan R. A., Batdorf R. L., Kleimack J. J., Wieg-mann W.
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