Физика полупроводниковых приборов Книга 2 - Зи С.
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19. Kleinknecht H. P. Indium Arsenide Tunnel Diodes, Solid State
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20. Burrus C. A. Indium Phosphide Esaki Diodes, Solid State Electron.,
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23. Logan R. A., Augustyniak W. М., Gilber J. F. Electron Bombardment
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26. Davis R. Е., Gibbons G. Design Principles and Construction ot
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27. Hindin H. J. Tunnel Diode Flying High, Electronics. 52, 81 (1979).
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29. Hauer W. B. Definition and Determination of the Series Inductance
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30. Esaki L., Miyahara Y. A New Device Using the Tunneling Process in
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32. Chynoweth A. G., Logan R. A., Thomas D. E. Th<jnon-Assisted
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33. Shurmer H. V. Backward Diodes as Microwave Detectors, Proc. Inst.
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34. Eng. S. T. Low-Noise Properties of Microwave Backward Diodes, IRE
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35. Hopkins J. B. Micrewave Backward Diodes in InAs, Solid State
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36. Bhattacharyya A B., Sarrot S L Switching Time Analysis of Backward,
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37. Torrey H. C., Whitmer C. A., Crystal Rectifiers, McGraw-Hill, N.
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38. Sze S. М., Ryder R. M. The Nonlinearity of the Reverse Current -
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39. Karlovskv J. The Curvature Coefficient of Germanium Tunnel and
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40. Dahlke W. E., Sze S. M. Tunneling in Meta] - Oxide - Silicon
Structures, Solid State Electron10, 865 (1967).
41. Chang L. L., Stiles P. J., Esaki L. Electron Tunneling between a
Metal and a Semiconductor: Characteristics of A1 - A1303 - SnTe and GeTe
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42. Kumar V., Dahlke W E. Characteristics of Cr - Si02 - nSi Tunnel
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43. Nicollian E. H.. Goetzberger A. The Si - SiOg Interface Electrical
Properties as Detejpiined by the MIS Conductance Technique, Beu syst.
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44. Esaki L., Stiles P. J. New Type (c)f Negative Resistance in Barrier
Tunneling, Phys. Rev. Lett., 16, 1108 (1966).
45. Green M. A., King F. ?)., Shewchun J. Minority Carrier MIS Tunnel
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46. Temple V. A. K., Green M. A., Schewchun J. Equiliferium-Jg-Nonequi-
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47. Card H. C., RhodcriGk E. H. Studies of Tunnel MOS Diodes I.
Interface Effects in Silicon Schottky Diodes, J. Phys. D Appl Phys., 4,
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48. Yamamota Т., Morimoto M. Thin-MIS-Strueture Si Negative Resistance
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49. Habib S. E.-D., Simmons J. G. Theory of Switching in p - n
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60. Simmons J. G., El-Badry A. Theory of Switching Phenomena In
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Туннельные приборы
149
Badry and Simmons J. G., Experimental Studies of Switching in Metal Semi-
