Физика полупроводниковых приборов Книга 1 - Зи С.
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27. Pugh D. Surface States on the (111) Surface of Diamond, Phys. Rev.
Lett., 12, 390 (1964).
28. Pauling L. The Nature of the Chemical Bond., 3rd ed., Cornell
University Press, Ithaca, N. Y., 1960.
29. Kurtin S., McGill Т. C., Mead C. A. Fundamental Transition
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Nature of Solids, Phys. Rev. Lett., 22, 1433 (1969).
Контакты металл - полупроводник
323
30. Mead С. A. Metal-Semiconductor Surface Barriers, Solid Slate
Electron., 9, 1023 (1966).
31. Crowell C. R., Sarace J. C., Sze S. M. Tungsten-Semiconductor
Schottky-Barrier Diodes, Trans. Met. Soc. AlME, 233, 478 (1965).
32. Lepselter M. P., Sze S. M. Silicon Scottky Barrier Diode with Near-
Ideal I-V Characteristics, Bell. Syst. Tech. J., 47, 195 (1968).
33. Andrews J. М., Korch F. B. Formation of NiSi and Current Transport
across the NiSi - Si Interface, Solid State Electron., 14, 901 (1971).
34. Goodman A. M. Metal - Semiconductor Barrier Height Measurement by
the Differential Capacitance Method - One Carrier System, J. Appl. Phys.,
34, 329 (1963).
35. Roberts G. I., Crowell C. R. Capacitive Effects of Au and Cu
Impurity Levels in Pt л-type Si Schottky Barriers, Solid State Electron.,
16, 29 (1973).
36. Crowell C. R., Spitzer W. G., Howarth L. E., Labate E. Attenuation
Length Measurements of Hot Electrons in Metal Films, Phys. Rev., 127,
2006 (1962).
37. Fowler R. H. The Analysis of Photoelectric Sensitivity Curves for
Clean Metals at Various Temperatures, Phys. Rev., 38, 45 (1931).
38. Crowell C. R., Sze S. М., Spitzer W. G. Equality of the Temperature
Dependence of the Gold - Silicon Surface Barrier and the Silicon Energy
Gap in Au n-type Si Diodes, Appl. Phys. Lett., 4, 91 (1964).
39. Beguwala М., Crowell C. R. Characterization of Multiple Deep Level
Systems in Semiconductor Junctions by Admittance Measurements, Solid
State Electron., 17, 203 (1974).
40. McCaldin J. O., McGill Т. C., Mead C. A. Schottky Barriers on
Compound Semiconductors: The Role of the Anion, J. Vac. Sci. Technol.,
13, 802 (1976).
41. Andrews J. M. The Role of the Metal - Semiconductor Interface in
Silicon Integrated Circuit Technology, J. Vac. Set. Technol., 11, 972
(1974).
42. Andrews J. М., Phillips J. С Chemical Bonding and Structure of
Metal -*¦ Semiconductor Interfaces, Phys. Rev. Lett., 35, 56 (1975).
43. van Gurp G. J. The Growth of Metal Silicide Layers on Silicon, in
Huff H. R., Sirtl Й., Eds., Semiconductor Silicon, 1977, Electrochemical
Society, Prince" ton, N. J., 1977, p. 342.
43a. Ohdomari I., Tu K. N., d'Hettrle F. М., Kuan T. S., Petersson S.
Schottky* Barrier Height of Iridium Silicide, Appl. Phys. Lett., 33, 1028
(1978).
44. Saltich J. L., Terry L. Ё. Effects of Pre* and Post-Annealing
Treatments on Silicon Schottky Barrier Diodes, Proc. IEEE, 58, 492
(1970).
46. Sinha A. K. Electrical Characteristics and Thermal Stability of
Platinum Silicide-to-Silicon Ohmic Contacts Metalized with Tungsten, J.
Electrochem. Soc., 120, 1767 (1973).
46. Sinha A. K., Smith Т. E., Read М. H., Poate J. M. я-GaAs Schottky
Diodes Metalized with Ti and Pt/Ti, Solid State Electron., 19, 489
(1976).
47. Chino K. Behavior of A1 - Si Schottky Barrier Diodes under Heat
Treatment, Solid State Electron., 16, 119 (1973).
48. Itoh Y., Hashimoto N. Reaction-Process Dependence of Barrier Height
between Tungsten Silicide and л-Туре Silicon, J. Appl. Phys., 40, 425
(1969),
49. Shannon J. M. Reducing the Effective Height of a Schottky Barrier
Using Low-Energy Ion Implantation, Appl. Phys. Lett., 24, 369 (1974).
50. Shannon J. M. Increasing the Effective Height of a Schottky Barrier
Using Low-Energy Ion Implantation, Appl. Phys. Lett., 25, 75 (1974).
51. Andrews J. М., Ryder R. М., Sze S. M. Schottky Barrier Diode
Contacts, U. S. Patent 3964084 (1976).
52. Shannon J. M. Control of Schottky Barrier Height Using Highly Doped
Surface Layers, Solid State Electron., 19, 537 (1976).
53. For general references on vacuum deposition, see Holland L. Vacuum
Deposition of Thin Films, Chapman & Hall, London, 1966; Roth A- Vacuum
Technology, North-Holland, Amsterdam, 1976,
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54. Honig R. E. Vapor Pressure Data for the Solid and Liquid Elements,
RCA Rev.,. 23, 567 (1962).
55. Young D. Т., Irvin J. C. Millimeter Frequency Conversion Using Au-
n-type GaAs Schottky Barrier Epitaxy Diode with a Novel Contacting
Technique, Proc. IEEE, 53, 2130 (1965); Kahng D., Ryder R. M. Small Area
Semiconductor Devices, U. S. Patent 3360851 (1968).
55a. Vanderwal N. C. A Microwave Schottky-Barrier Varistor Using GaAs for
Low Series Resistance, IEEE Int. Electron Device Meet., Washington, D.
C., Oct. 18-20, 1967.
56. Irvin J. C., Vanderwall N. C. Schottky-Barrier Devices, in Watson
H. A., Ed., Microwave Semiconductor Devices and Their Circuit
Applications, McGraw-Hill, N. Y., 1968.
57. McColl М., Millea M. F. Advantages of Mott Barrier Mixer Diodes,
Proc. IEEE, 61, 499 (1973).
58. Yu A. Y. C., Mead C. A. Characteristics of Al - Si Schottky Barrier
