Физика полупроводниковых приборов Книга 1 - Зи С.
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29. Kirk С. T. A Theory of Transistor Cutoff Frequency (fr) Fall-Off at
High Current Density, IEEE Trans. Electron Devices, ED-9, 164 (1962).
30. Morant M. J. Introduction to Semiconductor Devices, Addison-Wesley,
Reading, Mass.. 1964.
31. Early J. M. Effects of Space-Charge Layer Widening in Junction
Transistors, Proc. IRE, 40, 1401 (1952).
32. Ebers J. J., Moll J., L. Large-Signal Behavior of Junction
Transistors, Proc. IRE, 42, 1761 (1954).
33. deGraaff H. C. Review of Models for Bipolar Transistors, in Ref.
20.
34. Getreu I. E. Modeling the Bipolar Transistor, Elsevier, N. Y.,
1978.
35. Gummel H. K., Poon H. C. An Integral Chrage Control Model of
Bipolar Transistors, Bell Syst. Tech. J., 49, 827 (1970).
36. Tsukamato K., Akasaka Y., Watari Y., Kusano Y., Hirose Y., Nakamura
G. Arsenic-Implanted Emitter and Its Application to UHF Power
Transistors, Jpn. J. Appl. Phys., 17, Suppl., 17-1, 187 (1977).
37. Edwards R. Fabrication Control Is Key to Microwave Performance,
Electro-nics, 41, 109 (Feb. 1968).
38. Wang А. С. М., Kakihana S. Leakage and hfE Degradation in Microwave
Bipolar Transistors, IEEE Trans. Electron Devices, ED-21, 667 (1974).
39. Parrillo L. C., Payne R. S., Seidel T. F., Robinson McD.,
Reutlinger G. W., Post D. E., Field R. L. The Reduction of Emitter-
Collector Shorts in a High-Speed, All Implanted, Bipolar Technology, IEEE
Tech. Dig., Int. Electron Device Meet., 1979, p. 348.
40. Pritchard R. L., Angell J. B., Adler R. B., Early J. М., Webster W.
M. Transistor Internal Parameters for Small-Signal Representation Proc.
IRE, 49, 725 (1961).
41. Moll J. L. Physics of Semiconductors, McGraw-Hill, N. Y., 1964.
42. Daw A. N.. Mitra R. N., Choudhury N. K. D. Cutoff Frequency of a
Drift Transistor, Solid State Electron., 10, 359 (1967).
43. Kurokawa K. Power Waves and the Scattering Matrix, IEEE Trans.
Microwave Theory Tech., MTT-13, 194 (1965).
44. S-Parameter Techniques for Faster, More Accurate Network Design,
Application Note 95-1, Hewlett-Packard J., 18, No. 6 (Feb. 1967).
45. Nielson E. G. Behavior of Noise Figure in Junction Transistors,
Proc. IRE, 45, 957 (1957).
46. Cooke H. F. Microwave Transistors: Theory and Design, Proc. IEEE,
59, 1163 (1971).
47. Yau L. D., Tsai T. N. Fabrication of a Low-Noise Beam-Leaded
Microwave Bipolar Transistor by Electron and Photolithography, IEEE
Trans. Electron Devices, ED-25, 413 (1978).
48. Sakai Т., Sunohara Y., Sakakibara Y., Murota J. Stepped Electrode
Transistor, Jpn. J. Appl. Phys., 16, Suppl., 16-1, 43 (1977).
49. Archer J. A. Low-Noise Implanted-Base Microwave Transistors, Solid
State Electron., 17, 387 (1974).
50. Allison R. Silicon Bipolar Microwave Power Transistors, IEEE Trans.
Microwave Theory Tech., MTT-27, 415 (1979).
51. Gaur S. P., Navon D. H., Teerlinck R. W. Transistor Desing and
Thermal Stability, IEEE Trans. Electron Devices, ED-20, 527 (1973).
52. Arnold R. P., Zoroglu D. S. A Quantitative Study of Emitter
Ballasting, IEEE Trans. Electron Devices, ED-21, 385 (1974).
63. Thornton C. G., Simmons C. D. A New High Current Mode of Transistor
Operation, IRE Trans. Electron Devices, ED-5, 6 (1958).
Биполярные транзисторы
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54. Schafft Н. A. Second-Breakdown - A Comprehensive Review, Proc.
IEEE, 55, 1272 (1967).
55. Klein N. Electrical Breakdown in Solids, in Marton L., Eds.,
Advances in Electronics and Electron Physics. Academic, N. Y., 1968.
56. Dunn L., Nuttall К. I. An Investigation of the Voltage Sustained by
Epitaxial Transistors in Current Mode Second Breakdown, Int. J.
Electron., 45, 353 (1978).
67. Melchior H., Strutt M. J. O. Secondary Breakdown in Transistors,
Proc. IEEE, 52, 439 (1964).
58. Oettinger F. F., Blackburn D. L., Rubin S. Thermal Characterization
of Power Transistors, IEEE Trans. Electron Devices, ED-23, 831 (1976).
59. Moll J. L. Large-Signal Transient Response of Junction Transistors,
Proc, IRE, 42, 1773 (1954).
60. Rice D. Isoplanar-S Scales Down for New Heights in Performance,
Electronics,
52, 137 (1979).
61. Hart K., Slob A. Integrated Injection Logic - A New Approach to
LSI, ISSCC Dig. Tech. Pap., p. 92 (1972); IEEE J. Solid State Circuits,
SC-7, 346 (1972).
62. Berger H. H., Widemann S. K. Merged Transistor Logic - A Low-Cost
Bipolar Logic Concept, ISSC Dig. Tech. Pap., p. 90 (1972); also IEEE J.
Solid State Circuits. SC-7, 340 (1972).
63. Berger H. H., Wiedmann S. K. Advanced Merged Transistor Logic by
Using Schottky Junctions, Microelectronics, 7, 35 (1976).
64. Shockley W. U. S. Patent 2569347 (1951).
65. Konagai М., Takahashi K. GaAlAs-GaAs Heterojunction Transistors
with High Injection Efficiency, J. Appl. Phys., 46, 2120 (1975).
66. Mead C. A. Tunnel-Emmision Amplifiers, Proc. IRE, 48, 359 (1960).
67. Moll J. L. Comparison of Hot Electrons and Related Amplifiers, IEEE
Trans. Electron Devices, ED-10, 299 (1963).
68. Sze S. М., Gummel H. K. Appraisal of Semiconductor - Metal -
Semiconductor Transistors, Solid State Electron., 9, 751 (1966).
