Эффект Ганна - Левинштейн М.Е.
Скачать (прямая ссылка):
12. Guetin P. Contribution to the experimental study of the Gunn effect
in long GaAs samples.-"IEEE Trans.",
1967, v. ED-14, № 9, p. 552-562.
13. Ohtomo M. Nucleation of high-field domains in /г-GaAs. - "Japan J.
Appl. Phys.", 1968, v. 7, № 11, p. 1368- 1380.
14. Guha S., Karulkar V. T. Domain propagation in n-type gallium
arsenide in the presence of a localised copper-doped region. - "Phys.
Lett.", 1970, v. 31A, № 4, p. 199-200.
15. Kroemer N. Non-linear space-char-ge domain dynamics in a
semiconductor with negative differential mobility.-"IEEE Trans.", 1966,
v. ED-13, № 1, p. 27-40.
16. Thim H., Barber M. R. Observation of multiple high field domains in
п-GaAs. - "Proc. IEEE (Correspondence)", 1968, c. 56, № 1 (January), p.
110-111.
18-163
273
17. Бонч-Бруевич В. JI., Звягин И. П., Миронов А. Г. Доменная
электрическая неустойчивость в полупроводниках. М., "Наука", 1972.
18. Boer К. W., Dohler G., Dussel G. А., Voss P. Experimental
determination of changes in conductivity with electric field, using a
stationary high-field domain analysis.--"Phys. Rev.",
1968, v. 169, № 3, p. 700-705.
19. Boer K. W., Voss P. Stationary high-field domains in the range of
negative differential conductivity in CdS single crystals. - "Phys.
Rev.",
1968, v. '171, № 3, p. 899-903.
20. Boer K- W., Voss P. Transition between stationary and moving high-
field domains in CdS in a range of N-shaped negative differential
conductivity due to field-quenching. - "Phys. Stat. Solidi", 1968, v. 30,
№ 1, p. 291-304.
21. Boer K. W., Dohler G. Influence of boundary conditions on high-
field domains in Gunn diodes.-"Phys. Rev.",
1969, v. 186, № 3, p. 793-800.
22. Kroemer H. The Gunn effect under imperfect cathode boundary
conditions.-"IEEE Trans.", 1968, v. ED-15, № 11, p. 819-837.
23. Conwell E. M. Boundary conditions and high-field domains in GaAs. -
¦ "IEEE Trans.", 1970, v. ED-17, № 4, p. 262-270.
2 k Боголюбов H. H., Митропольский Ю. А. Асимптотические методы u теории
нелинейных колебаний, М., Фг.зматгиз, 1963.
25. Shockley W. Negative resistance arising from transit time in
semiconductors diodes. - "Bell. Syst. Techn. J.", 1954, v. 33, № 4, p.
799-826.
26. McCumber D. E., Chynoweth A. G. Theory of negative-conductance
amplification and of Gunn instabilities in "two-valley" semiconductors.-
"IEEE Trans.", 1966, v. ED-13, № 1, p. 4-21.
27. Butcher P. N. The Gunn effect. -¦ "Repts. Progr. Phys.", 1967, v.
30, № 1, p. 97-148.
28. McCumber D. E. Numerical studies of a two valley model of the Gunn
effect. Proc. Int. Conf. Phys. Semi-cond., Kyoto, 1966. - "J. Phys. Soc.
Japan", v. 21, Suppl., p. 522-526.
29. Robrock R. B. Analysis and simula-
tion of domain propagation in non-uniformly doped bulk GaAs. - "IEEE
Trans.", 1969, v. ED-16, № 7,
p. 647-653.
30. Siiga М., Sekido K. Effects of doping profile upon electrical
characteristics of Gunn diodes. - "IEEE Trans.",
1970, v. ED-17, № 4, p. 275-281.
31. Thim H. W. Computer study of bulk
274
GaAs devices with random and dimensional doping fluctuations. - "J. Appl.
Phys.", 1968, v. 39, № 8 p. 3897-3904.
СПИСОК ДОПОЛНИТЕЛЬНОЙ ЛИТЕРАТУРЫ
1. Colliver D. J., Gray K. W., Gib-
bons G., White P. M. Cathode contact effects in InP transferred electron
oscillators. Abstr. - "Sol.-St.
Devices", 1972, Proc. 2-nd Eur. Conf. Laneaster, 1972", London - Bristol,
1973, p. 172-173.
2. Murayama K., Ohmi T. Static negative resistance in highly doped
Gunn diodes and application to switching and amplification. - "Japan J.
Appl. Phys.", 1973, v. 12, № 12, p. 1931- 1936.
3. Irving L. D., Pattison J. E., Colliver D. J. The control of the
cathode contact barrier for high efficiency InP oscillators. - In: Eur
Microwave Conf. Proc. Brussels, 1973, v. 1, Louvain, S. A., № A, 7.3.
4. Tomizawa K-, Tateno H., Kataoka S. Computer analysis on the static
negative resistance due to geometrical effect of a GaAs bulk element. -
"IEEE Trans.", 1972, v. ED-19, №12, p. 1299-1300.
5. Wasse M. P., Clark B. W., Con-lon R. F. AgSn cathode contact in
gallium-arsenide transferred-electron devices. - "Electron Lett.", 1973,
v. 9, № 10, p. 189-190.
К главе 7
1. Cohen M. G., Knight S., Elward J. P.
Optical modulation in bulk GaAs using the Gunn effect. - "Appl. Phys.
Lett.", 1966, v. 8, № 11 (June 1),
p. 269-271.
2. Грехов И. В., Колчин А. М., Левин-штейн М. Е., Шур М. С. Краевой
электрооитический эффект.-"ФТП",
1971, т. 5, № 11, с. 2216-2219.
3. Guetin P., Boccon-Gibod D. Franz- Keldysh effect with Gunn domains
in bulk GaAs. - "Appl. Phys. Lett.",
1968, v. 13, № 5, p. 161-163.
4. Southgate P. D., Pager H. J., Chang К. K. N. Modulation of infrared
light by holes in pulse-ionized GaAs.-"J. Appl. Phys.", 1967, v. 38, № 6.
p. 2689-2691.
5. Shur M. S. The effect of the shift of the absorption edge by
electrical field in the degenerate semiconductors.-"Phys. Lett.", 1969,
v. 29A, № 9, p. 490-491.
6. Southgate P. D. Field-dependence of bulk electroluminescence.-"J.
