Научная литература
booksshare.net -> Добавить материал -> Физика -> Фаренбрух А. -> "Солнечные элементы: Теория и эксперимент" -> 119

Солнечные элементы: Теория и эксперимент - Фаренбрух А.

Фаренбрух А., Бьюб Р. Солнечные элементы: Теория и эксперимент — М.: Энергоатомиздат, 1987. — 280 c.
Скачать (прямая ссылка): solnechnieelementiteoriyaiexperement1987.djvu
Предыдущая << 1 .. 113 114 115 116 117 118 < 119 > 120 121 122 123 124 125 .. 130 >> Следующая

Nelson, R. J., Williams, J. S., Leamy, H. J., Miller, B., Casey, H. C., Jr., Parkinson, B. A.,
and Heller, A. (1980). Appl. Phys. Lett. 36, 76.
Nordheim, L. (1928). Proc. R. Soc. London, Ser. A 121, 626.
Nussbaum, A. (1962). "Semiconductor Device Physics,” p. 129. Prentice-Hall, Englewood
Cliffs, New Jersey.
Oldham, W. G., and Milnes, A. G. (1963). Solid-State Electron. 6, 121.
Oldham, W. G., and Milnes, A. G. (1964). Solid-State Electron. 7, 153.
Olsen, G. H., and Ettenberg, M. (1978). Growth effects in the heteroepitaxy of I1I-V compounds. In ‘‘Crystal Growth: Theory and Techniques” (C.H.L. Goodman, ed.), Vol. 2, p. 1. Plenum, New York.
Olsen, G. H., Nuese, C. J., and Smith, R. T. (1978). J. Vac. Sci. Technol. 15, 1410.7. Appl. Phys. 49, 5523.
Ottaviani, G., Sigurd, D., Marrello, V., Mayer, J. W., and McCaldin, J. O. (1974). J. Appl.
Phys. 45, 1730.
Padovani, F. A. (1968). Solid-State Electron. 11, 193.
Padovani, F. A. (1971). The voltage-current characteristics of metal-semiconcfuctor contacts. In "Semiconductors and Semimetals’’ (R. K. Willardson and A. C. Beer, eds.). Vol. 7A, p. 75. Academic Press, New York.
Padovani, F. A., and Stratton, R. (1966). Solid-State Electron. 9, 695.
Parker, G. H., and Mead, C. A. (1969a). Phys. Rev. 184, 780.
Parker, G. H., and Mead, C. A. (1969b). Appl. Phys. Lett. 14, 21.
Parker, G. H., McGill, Т. C., Mead, C. A., and Hoffman, D. (1968). Solid-State Electron. 11, 201.
Pellegrini, B., and Salardi, G. (1975). Solid-State Electron. 18, 791.
Ponpon, J. P., and Siffert, P. (1977). Rev. Phys. Appl. 12, 427.
Ponpon, J. P., and Siffert, P. (1978). Proc. 13th IEEE Photovoltaic Specialists. Conf.. p. 639.
Popovic, R. S. (1978). Solid-State Electron. 21, 1133.
Pulfrey, D. L,.(1976). IEEE Trans. Electron Devices ED-23, 587.
Pulfrey, D. L. (1978). IEEE Trans. Electron Devices ED-25, 1308.
Rediker, R. H., Stopek, S., and Ward, J. H. R. (1964). Solid-State Electron. 7, 621. Rhoderick, E. H. (1974). Conf. Ser.—Inst. Phys. No. 22, p. 3.
Riben, A. R. (1965). Thesis, Carnegie Inst. Technol., Pittsburgh, Pennsylvania.
Riben, A. R., and Feucht, D. L. (1966a). Int. J. Electron. 20, 583.
Riben, A. R., and Fuecht, D. L. (1966b). Solid-State Electron. 9, 1055.
Rideout, V. L. (1975). Solid-State Electron. 18, 541.
Rose, A. (1954). Onde Electr. 34, 645. [Also see Johnson, E. D., and Rose, A., Proc. IRE 47, 407 (1959).]
Rose, A. (1955). Phys. Rev. 97, 1538.
Rose, A. (1965). J. Appl. Phys. *35, 2664.
Rothwarf, A. (1975). Int. Workshop CdS Sol. Cells Other Abrupt Heterojunctions. Univ.
Del. NSF-RANN AER 75-15858, p. 9.
Rothwarf, A., Burton, L. C., Hadley, H. C., and Stork, G. M. (1975). Proc. Ilth IEEE Photovoltaic Specialists Conf., p. 476.
Sah, C.-T. (1962). IRE Trans. Electron Devices ED-9, 94.
Sah, C.-T. (1977). IEEE Trans. Electron Devices ED-24, 410.
Sah, C.-Т., Noyce, R. N., and Shockley, W. (1957). Proc. IRE 45, 1228.
St. Pierre, J. A., Singh, R., Shewchun, J., and Loferski, J. J. (1976). Proc. 12th IEEE Photovoltaic Specialists Conf., p. 847.
261
Salles, Y., Diguel, D., and Lauvray, H. (1978). Proc. 13th IEEE Photovoltaic Specialists Conf., p. 257.
Salter, G. C., and Thomas, R. E. (1976). Proc. Ilth IEEE Photovoltaic Specialists Conf., p. 862.
Sarrabayrouse, G., Buxo, J., Myszkowski, A., and Esteve, E. (1977). Rev. Phys. Appl. 12, 433.
Scharfetter, D. L. (1965). Solid-State Electron. S, 299.
Scaife, D. E. (1980). Solar Energy 25(1), 41.
Schluter, M. (1978). J. Vac. Sci. Technol. 15, 1374.
Schottky, W. (1938). Natunvissenschaften 26, 843.
Schottky, W., and Spenke, E. (1939). Wiss. Veroeff. Siemens-Werken IS, 225.
Schulz, М., and Johnson, N. M. (1977). Appl. Phys. Lett. 31, 622.
Schwartz, B., ed. (1969). “Ohmic Contacts to Semiconductors.” Electrochem. Soc., Pennington, New Jersey.
Schwuttke, G. H. (1974). Proc. Symp. Mater. Sci. Aspects Thin Film Syst. Sol. Energy Convers.
(NSF—RANN), Tucson, Ariz. p. 49.
Seager, С. H., and Ginley, D. S. Barrier heights and passivation of grain boundaries in poly-crystalline Si. (1980). Sol. Cells 1, 293.
Sello, H. (1968). Ohmic contacts and integrated circuits. In “Ohmic Contacts to Semiconductors” (B. Schwartz, ed.) p. 277. Electrochem. Soc., Pennington, New Jersey. Shewchun, J., Green, M. A., and King, F. D. (1974). Solid-State Electron. 17, 551, 563. Shewchun, J., Dubow, J., Myszkowski, A., and Singh, R. (1978). J. Appl. Phys. 49, 855. Shockley, W., and Queisser, H. J. (1961). J. Appl. Phys. 32, 510.
Smith, D. L. (1977). Phys. Stat. Sol. (a) 44, 381.
Spicer, W. E., Lindau, I., Gregory, P. E., Gamer, С. М., Pianetta, P., and Chye, P. W.
(1976). J. Vac. Sci. Technol. 13, 780.
Spicer, W. E., Lindau, I., Skeath, P., and Su, C. Y. (1980). J. Vac. Sci. Technol. 17(5), 1019.
Springgate, W. F. (1968). In “Ohmic Contacts to Semiconductors” (B. Schwartz, ed.), p.
253. Electrochem. Soc. Pennington, New Jersey.
Stannard, J. (1979). J. Vac. Sci. Technol. 16, 1462.
Stini, R. J., and Yeh, Y. С. M. (1977). IEEE Trans. Electron Devices ED-24, 476. Stratton, R. (1962). Phys. Rev. 125, 67.
Предыдущая << 1 .. 113 114 115 116 117 118 < 119 > 120 121 122 123 124 125 .. 130 >> Следующая

Реклама

c1c0fc952cf0704ad12d6af2ad3bf47e03017fed

Есть, чем поделиться? Отправьте
материал
нам
Авторские права © 2009 BooksShare.
Все права защищены.
Rambler's Top100

c1c0fc952cf0704ad12d6af2ad3bf47e03017fed