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Оптические вычисления - Арратуна Р.

Арратуна Р. Оптические вычисления — М.: Мир, 1993. — 441 c.
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22Patterson, R. H., Bromley, K., Monahan, M. A., and Symanski, J. J.
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^ 23Sahai, R., Pierson, R. L., Jr., Martin, E. H., and Higgins, J. A.
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24Schroder, D. K. (1984). Schottky barrier gate charge-coupled devices,
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27Sovero, E. A., Sahai, R., Hill, W. A., and Higgins, J. A. (1984).
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28Stillman, G. E., Wolfe, С. М., Bozler, С. O., and Rossi, J. A. (1976).
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29Sze, S. M. (1981). Physics of Semiconductor Devices, Wiley, New York,
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30Tanguay, A. R., Jr., (1984). "Materials requirements for optical
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3lWakita, K., Kawamura, Y., Yoshikuni, Y., Asahi, H. (1985). High-
temperature excitons and enhanced electroabsorption in InGaAs/InA1 As
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414
Литература
32 Wood, Т. Н., Burrus, С. A., Miller, D. А. В., Chemla, D. S., Damen, Т.
С., Gossard, А. С., and Weigmann, W. (1984). High-speed optical
modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure,
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Литература
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